NDLI: Analysis of the Survivability of GaN Low-Noise Amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Rudolph, M. Behtash, R. Doerner, R. Hirche, K. Wurfl, J. Heinrich, W. Trankle, G.
Copyright Year	1963
Abstract	This paper presents a detailed analysis of the stressing mechanisms for highly rugged low-noise GaN monolithic-microwave integrated-circuit amplifiers operated at extremely high input powers. As an example, a low-noise amplifier (LNA) operating in the 3-7-GHz frequency band is used. A noise figure (NF) below 2.3 dB is measured from 3.5 to 7 GHz with NF<1.8 dB between 5-7 GHz. This device survived 33 dBm of available RF input power for 16 h without any change in low-noise performance. The stress mechanisms at high input powers are identified by systematic measurements of an LNA and a single high electron-mobility transistor in the frequency and time domains. It is shown that the gate dc current, which occurs due to self-biasing, is the most critical factor regarding survivability. A series resistance in the gate dc feed can reduce this gate current by feedback, and may be used to improve LNA ruggedness
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	37
Ending Page	43
Page Count	7
File Size	782950
File Format	PDF
ISSN	00189480
Volume Number	55
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Low-noise amplifiers Noise measurement High power amplifiers Radiofrequency amplifiers Noise figure Radio frequency Stress Radiofrequency identification Electrical resistance measurement semiconductor device noise Amplifier noise integrated-circuit noise microwave field-effect transistor (FET) amplifiers monolithic-microwave integrated-circuit (MMIC) amplifiers noise
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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