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| Content Provider | IET Digital Library |
|---|---|
| Author | Guo, Men Wang, Yao Wu, Kangning Zhang, Lei Zhao, Xia Lin, Ying Li, Jianying |
| Abstract | Element doping is an effective method to improve the performance of ZnO varistors. Previous studies mainly focused on the variation of microstructures and Schottky barriers. In this study, the effects of Co dopant on electrical properties are investigated from the aspect of multiscale defect structures, including intrinsic point defects, the heterogeneous interface of depletion/intergranular layers, and interface states at grain boundaries. Combining with analysis of phase composition and energy dispersive spectroscopy, it is found that Co tends to dissolve into ZnO grains when slightly doped. It substitutes Zn2+ with the same valence and affects little on densities of donors. Segregation of Co at grain boundaries would result in the formation of spinel phase Co(Co4/3Sb2/3)O4 and transformation of the intergranular phase from α-Bi2O3 to δ-Bi2O3. Meanwhile, densities of point defects are indirectly affected by oxygen ambient during sintering, resulting in abnormal variation of grain resistivity. And interface states are enhanced, leading to improved barriers at grain boundaries. Therefore, reduced leakage current, enhanced grain resistivity, and improved non-linear coefficient in Co-doped ZnO varistor blocks are understood from the underlying multiple defect structures. This presents a potential approach to explore short-term performance and long-term stability of ZnO varistors from the aspect of defect responses. |
| Starting Page | 241 |
| Ending Page | 248 |
| Page Count | 8 |
| Volume Number | 5 |
| e-ISSN | 23977264 |
| Issue Number | Issue 3, Jun (2020) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/hve/5/3 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/hve.2019.0419 |
| Journal | High Voltage |
| Publisher | The Institution of Engineering and Technology CEPRI |
| Publisher Date | 2020-03-10 |
| Access Restriction | Open |
| Rights License | Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/) |
| Subject Keyword | Cobalt Dopant Effects Defect Responses Depletion-intergranular Layer Dissolving Distribution Doping And Implantation of Impurities Doping Profiles Electrical Property Electrical Property of Metal-nonmetal Contacts Element Doping Energy Dispersive Spectroscopy Enhanced Grain Resistivity Gradients Grain And Twin Boundaries Grain Boundaries Grain Boundary Segregation Heterogeneous Interface II-VI And III-V SemiConductor II-VI SemiConductor Impurity Concentration Interface State Intergranular Phase Intrinsic Point Defects Leakage Current Microstructure Multiscale Defect Structure Phase Composition Point Defects Resistor Schottky Barriers Segregation Semiconductor Device Semiconductor Doping Semiconductor Metal InterFace Sintering Surface Diffusion, Segregation And Interfacial Compound Formation Varistor Blocks Varistors Wide Band Gap SemiConductor Zinc Compound Zinc Oxide Varistors ZnO:Co |
| Content Type | Text |
| Resource Type | Article |
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