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| Content Provider | IET Digital Library |
|---|---|
| Author | Mao, Kun Qiao, Ming Li, Zhaoji Zhang, Bo |
| Abstract | An advanced low-cost and low-power high-voltage (HV) startup circuit which uses a 50 V pJFET and a 700 V T-nJFET (triple RESURF nJFET) is proposed. Compared with traditional technology, a mass of module area is saved. This mainly benefits from: first, with increase of V DS, I OFF (leakage current in off-state) can be quickly pinched off to a low value by pJFET without a large layout area which is needed for the traditional resistance method. Secondly, T-nJFET is located at the drain terminal of T-nLDMOS (triple RESURF LDMOS) with common drain electrode which also saves large area than traditional independent nJFET. Moreover, pJFET brings stable and low I OFF which leads to 4 mW P OFF (static power consumption in off-state) due to its low V P (pinch-off voltage) and high BVDS. |
| Starting Page | 1318 |
| Ending Page | 1320 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 49 |
| e-ISSN | 1350911X |
| Issue Number | Issue 21, Oct (2013) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/49/21 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2013.2459 |
| Journal | Electronics Letters |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Drain Electrode Drain Terminal Field Effect Device Field Effect Integrated Circuit High-voltage Startup Circuit Integrated Circuit Layout JFET Integrated Circuit Junction Gate Field Effect Transistors Layout Leakage Current Low Power Electronics Low-cost Low-power HV Startup Circuit Modelling And Testing Off-state Pinch-off Voltage PJFET Power 4 MW Power Field Effect Transistors Power Semiconductor Device Semiconductor Integrated Circuit Design Static Power Consumption T-nJFET T-nLDMOS Triple-resurf LDMOS Triple-resurf NJFET Voltage 50 V Voltage 700 V |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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