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| Content Provider | IET Digital Library |
|---|---|
| Author | Gómez, H. Espinosa, G. |
| Abstract | The design of a single-stage operational transconductance amplifier is presented, which uses self-cascode transistors and current shunt stages to improve its DC gain. The proposed amplifier is implemented in a standard 45 nm silicon on insulator CMOS process. Simulation results show that the amplifier has a DC gain above 50 dB despite physical and environmental variations with a minimum gain bandwidth product of 540 MHZ and more than 55° phase margin. In addition, the simulated transient behaviour is shown to be robust, with a slew rate of 500 V/μs and a settling time of 7 ns with 1% accuracy for a C L of 0.3 pF. |
| Starting Page | 737 |
| Ending Page | 739 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 50 |
| e-ISSN | 1350911X |
| Issue Number | Issue 10, May (2014) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/50/10 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2014.0883 |
| Journal | Electronics Letters |
| Publisher Date | 2014-05-02 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Amplifiers Bandwidth 540 MHz Capacitance 0.3 PF CMOS Analogue Integrated Circuit CMOS Integrated Circuit Current Shunt Stage Differential Amplifiers Elemental Semiconductor Gain 55 DB GBW Product Integrated Circuit Design Layout Microwave IC Minimum Gain Bandwidth Product Modelling And Testing Operational Amplifier Phase Margin PM PVT Single-stage Fully Differential Amplifier Self-cascode Transistor Semiconductor Integrated Circuit Design Silicon Silicon on Insulator Silicon-on-insulator Simulated Transient Behaviour Single-stage Operational Transconductance Amplifier Size 45 Nm Slew Rate SOI-CMOS Technology Time 7 Ns UHF Amplifiers UHF Integrated Circuit |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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