NDLI: Improved reliability properties of (Pb,La)(Zr,Ti)O3 ferroelectric capacitors by thin aluminium-doped zinc oxide buffer layer

Content Provider	IET Digital Library
Author	Takada, Y. Tsuji, T. Okamoto, N. Saito, T. Kondo, K. Yoshimura, T. Fujimura, N. Higuchi, K. Kitajima, A.
Abstract	Chemical solution deposition (CSD)-derived ferroelectric PbLaZrTiOx (PLZT) capacitors with an aluminium-doped zinc oxide (AZO) top electrode is fabricated. The effects of a thin conductive AZO buffer layer between the Pt bottom electrode and PLZT were investigated. The hydrogen degradation resistance of PLZT capacitors with a 10 and a 20 nm AZO buffer layer was improved up to 91 and 81%, respectively, of an initial polarisation value even after 45 min annealing in a 3% hydrogen atmosphere, from 42% of that without a buffer layer. The fatigue endurance (at 200 kV/cm (10 V) at 100 μs pulse width at 1 ms intervals) of the PLZT capacitor with a 10 nm AZO buffer layer was also improved after 107 cycles.
Starting Page	799
Ending Page	801
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 11, May (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/11
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.0187
Journal	Electronics Letters
Publisher Date	2014-05-16
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Aluminium Capacitor Chemical Solution Deposition Deposition from Liquid Phase (melts And Solutions) Ferroelectric Capacitor Ferroelectric Device Hydrogen Atmosphere Hydrogen Degradation Resistance Lanthanum Compound Lead Compound Liquid Phase Deposition PbLaZrTiOx Reliability Reliability Property Size 10 Nm Size 20 Nm Top Electrode Zinc Compound ZnO:Al
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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Fabrication of doped Pb(Zr,Ti)O3 capacitors on Pt substrates with different orientations

Al:ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors

Hydrogen profile measurement of (Pb,La)(Zr,Ti)O3 capacitor with conductive electrode after hydrogen annealing

The orientation controlled (Pb,La)(Zr,Ti)O3 capacitor for improved reliabilities

Comparative study of electrical properties of PbLaZrTiOx capacitors with Al-doped ZnO and ITO top electrodes

Antiferroelectric–ferroelectric phase boundary enhances polarization extension in rhombohedral Pb(Zr,Ti)O3

Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes

Effects of lanthanum nitrate buffer layer on the orientation and piezoelectric property of Pb(Zr, Ti)O3 thick film

Interface Effects of Pb(Zr,Ti)O3 Thin Film Capacitors with Pt, IrO2 and SrRuO3 Top Electrodes

Improved reliability properties of (Pb,La)(Zr,Ti)O3 ferroelectric capacitors by thin aluminium-doped zinc oxide buffer layer

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