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Interface Effects of Pb(Zr,Ti)O3 Thin Film Capacitors with Pt, IrO2 and SrRuO3 Top Electrodes
Content Provider | Semantic Scholar |
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Author | Nozaka, Takashi Masuda, Yoichiro |
Copyright Year | 2007 |
Abstract | The crystalline defects of electrode/ferroelectric interface of PZT thin film capacitors with Pt, IrO 2 and SrRuO 3 (SRO) top electrodes were investigated by TEM-EDX analysis. The interface of Pt/PZT and IrO2/PZT had an ideal interface structure, and formed good Schottky barriers. However, the Schottky barrier was not formed at the SRO/PZT interface. Because Ru diffused into the PZT surface, and this joint like Ohmic contact was formed. Moreover, a Sr-rich SRO layer of about 10 nm existed in interfacial neighborhood. This alteration layer influenced dielectric dispersion, and caused a remarkable bias dependency for the C-V characteristics. |
Starting Page | 276 |
Ending Page | 282 |
Page Count | 7 |
File Format | PDF HTM / HTML |
DOI | 10.1080/00150190701545581 |
Volume Number | 357 |
Alternate Webpage(s) | https://hi-tech.repo.nii.ac.jp/index.php?action=pages_view_main&active_action=repository_action_common_download&attribute_id=22&block_id=17&file_no=1&item_id=1473&item_no=1&page_id=13 |
Alternate Webpage(s) | https://doi.org/10.1080/00150190701545581 |
Language | English |
Access Restriction | Open |
Content Type | Text |
Resource Type | Article |