NDLI: 12-Channel, 480 Gbit/s optical receiver analogue front-end in 0.13 μm BiCMOS technology

Content Provider	IET Digital Library
Author	Chen, Yingmei Li, Jiquan Zhang, Zhen Wang, Hui Zhang, Yunan
Abstract	A compact 12-channel 480 Gbit/s optical receiver analogue front-end (AFE) for parallel optical transmission systems has been implemented in 0.13 μm SiGe BiCMOS technology. The transimpedance amplifier of AFE employed common-gate amplifier and negative feedback structure to decrease input impedance and broaden bandwidth. The limiting amplifier adopted modified Cherry–Hooper amplifier with active feedback technique to stabilise current and acquire high gain simultaneously. Without on-chip spiral inductors, the spacing of adjacent channels is constricted to 250 μm and the chip area is only 3350 × 700 μm. With the psuedo-random binary sequence (PRBS) input data, the maximum operating rate of the AFE is 38.7 Gbit/s; meanwhile, the root mean square (RMS) jitter is 2.16 ps and the single-ended output amplitude of 183.7 mV is achieved. The power consumption of each channel is 150 mW from a 3.3 V supply.
Starting Page	492
Ending Page	494
Page Count	3
ISSN	00135194
Volume Number	53
e-ISSN	1350911X
Issue Number	Issue 7, Mar (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/53/7
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.4653
Journal	Electronics Letters
Publisher Date	2017-02-28
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Active Feedback Technique Amplifiers BiCMOS Analogue Integrated Circuit Bit Rate 38.7 Gbit/s Bit Rate 480 Gbit/s Common-gate Amplifier Input Impedance Mixed Technology Integrated Circuit Modified Cherry-Hooper Amplifier Negative Feedback Structure Operational Amplifier Optical Communication Equipment Optical Receiver Optical Receiver AFE Optical Receiver Analogue Front-end Parallel Optical Transmission System Power 150 MW Power Consumption PRBS Input Data RMS Jitter Silicon Germanium BiCMOS Technology Single-ended Output Amplitude Size 0.13 Mum Transimpedance Amplifier Voltage 183.7 MV Voltage 3.3 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

3 Gbit/s optical receiver IC with high sensitivity and large integrated pin photodiode

30 Gb/s integrated receiver array for parallel optical interconnects

A low-noise energy-efficient inductor-less 50 Gbit/s transimpedance amplifier with high gain-bandwidth product in 0.13 µm SiGe BiCMOS

A low noise transimpedance amplifier for 2.5 Gb/s optical communications

High-speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 μm SiGe BiCMOS

Fully integrated auto-zero feedback with lower cutoff frequency below 50 kHz in a 40 GBit/s transimpedance amplifier

Fully integrated four-input combining receiver front-end circuit for laser radar with static unitary detector

Fully differential, 40 Gb/s regulated cascode transimpedance amplifier in 0.13 µm SiGe BiCMOS technology

A broadband, differential transimpedance amplifier in 0.35 μm SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends

12-Channel, 480 Gbit/s optical receiver analogue front-end in 0.13 μm BiCMOS technology

Similar Documents

3 Gbit/s optical receiver IC with high sensitivity and large integrated pin photodiode

30 Gb/s integrated receiver array for parallel optical interconnects

A low-noise energy-efficient inductor-less 50 Gbit/s transimpedance amplifier with high gain-bandwidth product in 0.13 µm SiGe BiCMOS

A low noise transimpedance amplifier for 2.5 Gb/s optical communications

High-speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 μm SiGe BiCMOS

Fully integrated auto-zero feedback with lower cutoff frequency below 50 kHz in a 40 GBit/s transimpedance amplifier

Fully integrated four-input combining receiver front-end circuit for laser radar with static unitary detector

Fully differential, 40 Gb/s regulated cascode transimpedance amplifier in 0.13 µm SiGe BiCMOS technology

A broadband, differential transimpedance amplifier in 0.35 μm SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends

12-Channel, 480 Gbit/s optical receiver analogue front-end in 0.13 μm BiCMOS technology