NDLI: Differential capacitive pressure sensor design based on standard CMOS

Content Provider	IET Digital Library
Author	Unigarro, E. Bohórquez, J. C. Achury, A. Ramirez, F. Sacristán, J. Quijano, F. Segura
Abstract	A microelectromechanical system capacitive pressure sensor with a differential configuration (patent pending), including a reference and sensitive capacitor, is presented. A single cavity includes both reference and sensitive electrodes. This implementation is achieved by a size reduction of the sensitive electrode. A reduction of the 40% on the sensible electrode area represents a decrease in the sensor sensitivity of only 12.5%, and allows the reference capacitor implementation in the area commonly used only for the sensitive capacitor. A tridimensional model of the sensor was simulated using a finite-element solver considering coupled mechanical and electrostatic models. The simulations show that this pressure sensor has a sensitivity of 4.2 fF/bar. The proposed pressure sensor designs use only materials available in complementary metal oxide silicon (CMOS) standard processes. A CMOS compatible post-process, based on the sacrificial material technique and its restrictions is presented.
Starting Page	737
Ending Page	739
Page Count	3
ISSN	00135194
Volume Number	53
e-ISSN	1350911X
Issue Number	Issue 11, May (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/53/11
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2017.0463
Journal	Electronics Letters
Publisher Date	2017-05-11
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Capacitance Measurement Capacitive Sensor CMOS Integrated Circuit Complementary Metal Oxide Silicon Standard Processing Coupled Mechanical Model Design And Modelling of MEMS And NEMS Device Differential Capacitive Pressure Sensor Electrochemical Electrodes Electrostatic Model Electrostatics Elemental Semiconductor Finite Element Analysis Finite Element Solver Impedance And Admittance Measurement Integrated Circuit Design Layout Microelectromechanical System Capacitive Pressure Sensor Microsensor Microsensors And Nanosensors Modelling And Testing Patent Pending Pressure And Vacuum Measurement Pressure Measurement Pressure Sonsor Reference Capacitor Reference Electrode Sacrificial Material Technique Semiconductor Integrated Circuit Design Sensitive Electrode Silicon Standard CMOS Processing Tridimensional Model
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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