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| Content Provider | IET Digital Library |
|---|---|
| Author | Baek, S. J. Kim, J. C. Yook, J. M. |
| Abstract | A simple process to improve the quality factor of metal–insulator–silicon (MIS) capacitors is introduced. Typically, MIS capacitors show a low quality factor in the gigahertz range because the lower electrode is silicon, which has low conductivity. The electrical conductivity of the lower electrode of the MIS capacitor is improved by the application of side metal coating through a simple process. To make the side metal of the MIS capacitor, a 200 µm-deep trench is formed between each capacitor using a sawing machine, and then the top electrode and side metal coating are added at the same time. Since scribing is performed prior to realisation of the top electrode, no additional dicing process is required. The quality factor of the proposed capacitor is improved from 73.8 to 101.3 at 2 GHz just by the addition of the side metal electrode. |
| Starting Page | 515 |
| Ending Page | 517 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 54 |
| e-ISSN | 1350911X |
| Issue Number | Issue 8, Apr (2018) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/54/8 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2017.4349 |
| Journal | Electronics Letters |
| Publisher Date | 2018-03-12 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Capacitor Coating Technique Electrical Conductivity Frequency 2 GHz Gigahertz Range Metal-insulator-silicon Capacitor MIS Capacitor Q Factor Quality Factor Improvement Sawing Machine Scribing Semiconductor Device Side Metal Coating Side Metal Electrode Top Electrode |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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