NDLI: 5 GHz laterally-excited bulk-wave resonators (XBARs) based on thin platelets of lithium niobate

Content Provider	IET Digital Library
Author	Plessky, V. Yandrapalli, S. Turner, P. J. Villanueva, L. G. Koskela, J. Hammond, R. B.
Abstract	In a free-standing 400-nm-thick platelet of crystalline ZY-LiNbO3, narrow electrodes (500 nm) placed periodically with a pitch of a few microns can eXcite standing shear-wave bulk acoustic resonances (XBARs), by utilising lateral electric fields oriented parallel to the crystalline Y-axis and parallel to the plane of the platelet. The resonance frequency of ∼4800 MHz is determined mainly by the platelet thickness and only weakly depends on the electrode width and the pitch. Simulations show quality-factors (Q) at resonance and anti-resonance higher than 1000. Measurements of the first fabricated devices show a resonance Q-factor ∼300, strong piezoelectric coupling ∼25%, (indicated by the large Resonance-antiResonance frequency spacing, ∼11%) and an impedance at resonance of a few ohms. The static capacitance of the devices, corresponds to the imaginary part of the impedance ∼100 Ω. This device opens the possibility for the development of low-loss, wide band, RF filters in the 3–6 GHz range for 4th and 5th generation (4G/5G) mobile phones. XBARs can be produced using standard optical photolithography and MEMS processes. The 3rd, 5th, 7th, and 9th harmonics were observed, up to 38 GHz, and are also promising for high frequency filter design.
Starting Page	98
Ending Page	100
Page Count	3
ISSN	00135194
Volume Number	55
e-ISSN	1350911X
Issue Number	Issue 2, Jan (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/55/2
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.7297
Journal	Electronics Letters
Publisher Date	2018-11-23
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	4th Generation Mobile Phones 5th Generation Mobile Phones Acoustic Resonator Acoustic Wave Device Bulk Acoustic Wave Device Crystal Resonator Crystalline Y-axis Electrode Free-standing Platelet Frequency 3.0 GHz to 6.0 GHz Frequency 5.0 GHz High Frequency Filter Lateral Electric Field Laterally-excited Bulk-wave Resonator LiNbO3 Lithium Compound Lithium Niobate Lithography Low-loss Filter MEMS Process Micromechanical Device Microwave Filter Microwave Resonator Narrow Electrodes Optical Photolithography Passive Filter Passive Network Photolithography Piezoelectric Coupling Piezoelectric Device Q Factor Quality-factors Resonance Frequency Resonance Q-factor Resonance-antiresonance Frequency Spacing RF Filter Semiconductor Technology Shear-wave Bulk Acoustic Resonances Size 400 Nm Size 500.0 Nm Waveguide And Microwave Transmission Line Component Wide Band Filter XBAR
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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