NDLI: High-speed gate driver circuit of SiC-MOSFET for high temperature application

Content Provider	IET Digital Library
Author	Zhou, Min Lv, Hongliang Zhang, Yimeng Xu, Shuai Zhang, Yuming
Abstract	In this study, a silicon carbide (SiC) MOSFET driving circuit and its protection circuit applied to high temperature (HT) environment are designed by using commercial off-the-shelf discrete components. The proposed driving circuit can work at 200 ° C with a low driving dissipation. An isolation structure with a transformer is utilised to prevent the control circuits from being disturbed by the power circuit. The high value of output driving voltage V GS is 19 V to ensure the low on-resistance of SiC MOSFET, while the low value of V GS is − 5 V to ensure the SiC MOSFET not be turned on mistakenly. The driving circuit also solves the the contradiction between the BJT switch speed and power dissipation of conventional HT SiC MOSFET driving circuit. The rising time and falling time of the output V GS are reduced greatly, which can increase the performance of SiC MOSFET in high frequency application at a HT.
Starting Page	3851
Ending Page	3860
Page Count	10
ISSN	17554535
Volume Number	13
e-ISSN	17554543
Issue Number	Issue 17, Dec (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2020.0597
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/13/17
Journal	IET Power Electronics
Publisher Date	2020-12-03
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	BJT Switch Speed Commercial Off-the-shelf Discrete Component Control Circuit Conventional HT Silicon Carbide MOSFET Driving Circuit Driver Circuit High Frequency Application High Temperature Application High Temperature Environment High-speed Gate Driver Circuit Low Driving Dissipation Low On-resistance MOSFET Circuit Output Driving Voltage Power Circuit Power Electronics Power Supply Protection Circuit SiC Silicon Compound Supervisory Circuit Temperature 200.0 DegC Voltage -5.0 V Voltage 19.0 V Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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