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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jae-Min Jeong Jong-Haw Lee Gwiy-Sang Chung |
| Copyright Year | 2008 |
| Description | Author affiliation: Sch. of Electr. Eng., Univ. of Ulsan, Ulsan (Jae-Min Jeong; Jong-Haw Lee; Gwiy-Sang Chung) |
| Abstract | 3C-SiC thin film is widely used extreme environment, RF and Bio-material in micro/nano electronic mechanical systems (M/NEMS). Mechanical properties of 3C-SiC thin films are required in the designing stage, because it is needed to accurately measuring Youngpsilas Modulus and hardness. The Youngpsilas Modulus and hardness is influenced by N-doping. In this paper, it was showed that the mechanical properties of polycrystalline (poly) 3C-SiC thin film was influenced by N-doping concentration, and 3C-SiC thin filmpsilas mechanical properties according to the N-doping concentration 1%, 3%, 5%, respectively was measured by Nano Indentation. In the case of 1% N-doping concentration, Youngldquos Modulus and Hardness were obtained as 270 GPa and 30 GPa, respectively. When the surface roughness according to N-doping concentrations was investigated by AFM (atomic force microscope), the roughness of 3C-SiC thin film doped by 5% concentration was 15 nm, which is also the best of them. |
| Starting Page | 198 |
| Ending Page | 201 |
| File Size | 304142 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424423194 |
| DOI | 10.1109/IFOST.2008.4602929 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-06-23 |
| Publisher Place | Russia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CVD Silicon carbide poly 3C-SiC HMDS Lattices Doping Mechanical variables measurement Mechanical factors Surface roughness Rough surfaces |
| Content Type | Text |
| Resource Type | Article |
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