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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jeong-Hak Ahn Kyu-Hyung Yoon Gwiy-Sang Chung |
| Copyright Year | 2008 |
| Description | Author affiliation: Univ. of Ulsan, Ulsan (Jeong-Hak Ahn; Kyu-Hyung Yoon; Gwiy-Sang Chung) |
| Abstract | In this paper, poly 3C-SiC thin films were grown on $SiO_{2}/Si$ by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_{2},$ and Ar gas at 1100 for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and orientationation of palladium were analyzed by XRD. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by current-voltage measurements. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and application. |
| Starting Page | 202 |
| Ending Page | 204 |
| File Size | 352291 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424423194 |
| DOI | 10.1109/IFOST.2008.4602854 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-06-23 |
| Publisher Place | Russia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature sensors Schottky diodes Temperature X-ray scattering Silicon carbide Silicon Substrates |
| Content Type | Text |
| Resource Type | Article |
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