NDLI: Characterisation of silicon nitride thin films used as stressor liners on CMOS FETs

Content Provider	IEEE Xplore Digital Library
Author	Raymond, G. Morin, P. Devos, A. Hess, D.A. Braccini, M. Volpi, F.
Copyright Year	2008
Description	Author affiliation: CNRS, UJFG, Grenoble (Raymond, G.)
Abstract	Performance enhancement thanks to process induced strained technology is mandatory in recent CMOS technology (90 nm and beyond) to meet the device specifications [1]. In fact the strain induced in the Si channel results in band structure distortion and mobility increase [2]. Silicon Nitride (SiN) Contact Etch Stop Layers (CESL) are widely used for this purpose and bring for example up to 70 % saturation current increase in PMOS transistors. Typical physical and chemical characterisations are usually carried out but mechanical measurements are not common on such high stressed thin films. The purpose of this paper is the measurement of Young's modulus and hardness by nanoindentation and picosecond acoustic. In this paper, we demonstrate that contrary to what the nanoindentation theory expect, one can mechanically characterise our 200 nm thickness high stressed SiN thin film. Moreover, picosecond acoustic appears as the best method for thinner films mechanical characterisation.
Starting Page	199
Ending Page	202
File Size	120662
Page Count	4
File Format	PDF
ISBN	9781424417292
DOI	10.1109/ULIS.2008.4527173
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-03-12
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon compounds Acoustic distortion Semiconductor thin films CMOS technology Acoustic measurements CMOS process Capacitive sensors Etching Transistors FETs
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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