NDLI: Simulation of strain enhanced variability in nMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Xingsheng Wang Binjie Cheng Roy, S. Asenov, A.
Copyright Year	2008
Description	Author affiliation: Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow (Xingsheng Wang; Binjie Cheng; Roy, S.; Asenov, A.)
Abstract	We present a 3D simulation methodology aiming to capture the impact of strain on the line edge roughness (LER) induced variability in nMOSFETs. It includes both process and device simulation calibrated in respect of real 35 nm gate length nMOSFETs. Statistical LER of the gate pattern is introduced at the process simulation stage, and the impact of strain on the LER induced variability is investigated in Silicon nMOSFETs for the first time. Gate LER introduces both doping profile variability, and variability in the strain distribution in the channel, both contributing to the statistical variability in device electrical characteristics.
Starting Page	89
Ending Page	92
File Size	506435
Page Count	4
File Format	PDF
ISBN	9781424417292
DOI	10.1109/ULIS.2008.4527147
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-03-12
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fluctuations Computational modeling Doping profiles Capacitive sensors strain variability MOSFETs Tensile strain Implants strained silicon intrinsic parameter fluctuations Silicon Power system reliability line edge roughness Thermal stresses
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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