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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xiaojie Jia Chao Liu Jianjun Lai Youjun Deng Bin Ai |
| Copyright Year | 2012 |
| Abstract | Arrangement selected crystallization of different thickness from 100nm to 350nm of amorphous silicon thin films on glass were prepared by 248nm wavelength UV excimer laser. A cleverly designed 5-dot-mask was used to reshape the laser beam and the sample was placed and scanned by laser on a XY-Axis translation stage with the movement controlled by a programmable controller accurately in order to optimize the process conditions, different kinds of laser energies and thickness of amorphous silicon thin films were utilized. The laser-crystallized samples were characterized by Raman spectrometer, metallurgical microscope and scanning electron microscope (SEM). From the results we tend to draw the following conclusion that the poly-Si seed layer can gain better crystallization quality with higher laser pulse energy and thinner amorphous silicon thin films. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 929426 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781457709098 |
| ISSN | 21568480 |
| e-ISBN | 9781457709111 |
| DOI | 10.1109/SOPO.2012.6270560 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-05-21 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Scanning electron microscopy Lasers Crystallization Amorphous silicon Laser beams |
| Content Type | Text |
| Resource Type | Article |
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