NDLI: Performance Enhanced OLEDs Using a Li3N Doped Tris(8-Hydroxyquinoline) Aluminum(Alq3) Thin Film as Electron-Injecting and Transporting Layer

Content Provider	IEEE Xplore Digital Library
Author	Chuannan Li Tao Li Aiwu Li Guoyu Cui Rui Zhang Shiyong Liu
Copyright Year	2010
Abstract	Lithium nitride (Li3N) is demonstrated to be an efficient n-type dopant in the widely used electron-injecting and transporting material tris(8-hydroxyquinoline) aluminum (Alq3) for Organic Light-emitting Diodes (OLEDs). Li3N doped Alq3 thin film can availably enhance the electron injection and transport ability of OLEDs, which can improve the luminance and the efficiency of doped OLEDs compared to the referenced device. Device ITO/m-MTDATA/NPB/Alq3/Alq3:Li3N/Al with optimized doping concentration and thickness exhibits a maximal luminance of 28640 cd/m2, and current efficiency 2.30cd/A, a turn-on voltage 2.9V, in contrast to 6334 cd/m2, 0.44cd/A and 4.7V for the non-doped device. Processing of Li3N is much easier and safer than that of alkaline metals, since Li3N is air-stable and has low deposition temperature which is similar to that of organic semiconductor materials.
Starting Page	1
Ending Page	4
File Size	567508
Page Count	4
File Format	PDF
ISBN	9781424449637
DOI	10.1109/SOPO.2010.5504074
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-19
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Organic materials Aluminum Thin film devices Indium tin oxide Doping Voltage Organic light emitting diodes Transistors Lithium compounds Electrons
Content Type	Text
Resource Type	Article

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