NDLI: CMOS operation below freezeout

Content Provider	IEEE Xplore Digital Library
Author	Broadbent, S.B.
Copyright Year	1989
Description	Author affiliation: Rockwell Int. Sci. Center, Anaheim, CA, USA (Broadbent, S.B.)
Abstract	A description is given of a cryogenic CMOS process, Rockwell Cryogenic CMOS (RC/sup 2/), for use in readout circuits for impurity band conduction detectors that must operate at a temperature of 12 K or less. The RC/sup 2/ process has been successfully used to implement both analog and digital circuits that operate very well at 10 K. The behavior of RC/sup 2/ FETs in the weak inversion region is discussed. To minimize the power consumption of the large arrays of analog detector readout circuits, the subthreshold region of FET operation is utilized. MOSFETs at these temperatures exhibit the kink effect and have long time constants to reach equilibrium after a large bias change, which must be considered in circuit design. It is concluded that the RC/sup 2/ approach has overcome some of the major obstacles to basic functionality of circuits at temperatures below freezeout and in weak as well as strong inversion.<>
Starting Page	43
Ending Page	47
File Size	228703
Page Count	5
File Format	PDF
DOI	10.1109/LTSE.1989.50179
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-08-07
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Energy consumption Temperature Impurities Cryogenics Detectors CMOS process FETs Digital circuits MOSFETs Sensor arrays
Content Type	Text
Resource Type	Article

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