NDLI: Comparison of carrier velocity in 0.25 mu m gate-length conventional, pseudomorphic, and lattice-matched modulation-doped FETs at 300 K and 77 K

Content Provider	IEEE Xplore Digital Library
Author	Fu, S.T. Liu, S.-M.J. Das, M.B. Chao, P.C. Duh, K.-H.G. Ho, P. Ballingall, J.M.
Copyright Year	1989
Description	Author affiliation: Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA (Fu, S.T.; Liu, S.-M.J.; Das, M.B.)
Abstract	The microwave characterization of 0.25- mu m gate-length MODFETs at 300 and 77 K is reported. Microwave S-parameter measurements of MODFETs from 0.45 to 20 GHz were used to extract their HF equivalent network parameters. After allowing for the parasitic gate and drain-to-gate feedback capacitances, the intrinsic unity-current gain frequency was determined. Using a theoretical model, the effective carrier saturation velocity and average velocity ( nu /sub av/) were obtained for the conventional AlGaAs/GaAs, the pseudomorphic AlGaAs/InGaAs/GaAs, and lattice-matched InAlAs/InGaAs/InAlAs on InP samples at 300 K and 77 K. The extracted values of nu /sub a/ range from 0.8210/sup 7/ cm/s to 3.8410/sup 7/ cm/s, respectively, depending on the type of MODFET and operating temperature. These high values of nu /sub av/ indicate that the velocity overshoot effect is present in the devices tested.<>
Starting Page	19
Ending Page	23
File Size	352475
Page Count	5
File Format	PDF
DOI	10.1109/LTSE.1989.50174
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-08-07
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Feedback Hafnium HEMTs Indium gallium arsenide Indium compounds Scattering parameters MODFETs Microwave measurements Parasitic capacitance
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in