NDLI: Design and measurement of Band V WCDMA LNA utilizing design kit with scalable parametric cell inductors

Content Provider	IEEE Xplore Digital Library
Author	Salleh, S. Hashim, M.F.
Copyright Year	2010
Description	Author affiliation: Telekom Research and Development, 63000 Cyberjaya, Selangor, Malaysia (Salleh, S.; Hashim, M.F.)
Abstract	A low-noise amplifier (LNA) integrated circuit (IC) has been designed and implemented on a 0.13μm RF CMOS process technology. The performance of the LNA has been targeted to exceed WCDMA standard specification. This paper presents the design methodology and compares the simulated and measurement results of the cascode LNA with inductive degeneration. There were expected mismatch between simulation and measurement data, thus some of the matching elements were intentionally placed outside of the chip. Additionally, target frequency on simulation was designed at a general 850MHz frequency but later on measurement the target frequency was moved close to the center of receive frequency of Band V of WCDMA. On the simulation, at resonance frequency of 850MHz the NF is 0.54dB, 1dB input compression point is −26.67dBm and S21 is 27.86dB. On measurement where impedance matching were done exactly as in simulation with the exception in value of quality factor Q of the external passive devices, the NF about 2dB, 1dB input compression point is −25.3dB and S21 is 18dB at 875MHz. Value of LS and LG were adjusted to move peak of S21 to be at almost the new target frequency of 881.5MHz. Measurement result after impedance was matched to the band V receive center frequency, S21 has dropped to 13.37dB, NF has jumped to 2.65dB but linearity improved where 1dB input compression point has increased to −18.14dBm mainly because the drop in S21.
Starting Page	118
Ending Page	125
File Size	1002235
Page Count	8
File Format	PDF
ISBN	9781424478095
e-ISBN	9781424478088
DOI	10.1109/ASQED.2010.5548229
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-08-03
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low-noise amplifiers Frequency measurement Multiaccess communication Noise measurement Inductors Semiconductor device measurement external matching Impedance measurement chip-on board Integrated circuit measurements cascode with inductive degeneration Radiofrequency integrated circuits RF CMOS integrated circuit CMOS integrated circuits low noise amplifier
Content Type	Text
Resource Type	Article

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