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Content Provider | IEEE Xplore Digital Library |
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Author | Dong-Jun Kim Ju-Ho Park Sang-Gyu Park |
Copyright Year | 2008 |
Description | Author affiliation: Div. of Electron. & Comput. Eng., Hanyang Univ., Seoul (Dong-Jun Kim; Ju-Ho Park; Sang-Gyu Park) |
Abstract | Area-efficient ESD (Electro Static Discharge) power clamp using gate-coupled structure for Smart Power technology is proposed. The use of Big-FET parasitic Capacitance results in the reduction of the total size of the circuit when compared to the Darlington scheme and RC triggered circuits. The performance of the proposed ESD power clamp was successfully verified in a 0.35 um 60 V BCD (bipolar CMOS DMOS) process by TLP (Transmission Line Pulse) measurements. |
File Size | 97640 |
File Format | |
ISBN | 9781424425983 |
DOI | 10.1109/SOCDC.2008.4815664 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2008-11-24 |
Publisher Place | South Korea |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Pulse measurements gate-coupled structure Electrostatic discharge CMOS process Clamps smart power technology power clamp circui Power transmission lines Power measurement Distributed parameter circuits CMOS technology electrostatic discharge (ESD) Power integrated circuits Parasitic capacitance |
Content Type | Text |
Resource Type | Article |
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