NDLI: Impact of ULK Dielectric Loss on Interconnect Response for 45 nm Node Integrated Circuits

Content Provider	IEEE Xplore Digital Library
Author	de Rivaz, S. Lacrevaz, T. Gallitre, M. Farcy, A. Blampey, B. Bermond, C. Flechet, B.
Copyright Year	2009
Description	Author affiliation: Université de Savoie, IMEP-LAHC, UMR CNRS 5130, 73376 Le Bourget du Lac - France. sebastien.derivaz@univ-savoie.fr (de Rivaz, S.) \|\| Université de Savoie, IMEP-LAHC, UMR CNRS 5130, 73376 Le Bourget du Lac - France; STMicroelectronics, 38920 Crolles - France (Gallitre, M.) \|\| STMicroelectronics, 38920 Crolles - France (Farcy, A.) \|\| Université de Savoie, IMEP-LAHC, UMR CNRS 5130, 73376 Le Bourget du Lac - France (Lacrevaz, T.; Blampey, B.; Bermond, C.; Flechet, B.)
Abstract	New materials such as dielectrics with ultra low permittivity are required to improve interconnect performance for future IC's technology nodes. Porous dielectric materials, as SiOCH, used for the 45 nm technology are very prone to damage during integration process, degrading their permittivity and severely increasing their loss tangent. Theses dielectric losses have to be precisely taken into account in order to accurately simulate the propagation effects along interconnects and to predict delay and crosstalk. Thus fine large-band extraction of complex permittivity must be achieved in respect to physical consistence of signals. This study aims at accurately evaluate the impact of dielectric degradation on interconnects electrical performance. Moreover it will be outlined, using two different IC's configurations, that the accurately on the prediction of interconnect performance needs adequate dielectric models.
Starting Page	115
Ending Page	118
File Size	2828996
Page Count	4
File Format	PDF
ISBN	9781424427420
DOI	10.1109/IMWS.2009.4814921
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-02-19
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit technology generalized Debbye model Delay effects integrated circuits interconnects Dielectric materials Ultra Low K Integrated circuit interconnections Predictive models dielectric loss Degradation microwave measurements signal integrity propagation Dielectric losses Propagation losses 45 nm node Permittivity Propagation delay
Content Type	Text
Resource Type	Article

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