NDLI: Design and implementation of bias sequence circuits for GaN HEMT amplifiers both pulsed and CW applications

Content Provider	IEEE Xplore Digital Library
Author	Cheema, N. Azam, S. Kashif, A. Mughal, F.A. Imran, M.
Copyright Year	2013
Description	Author affiliation: Center of Excellence CESAT, Islamabad, Pakistan (Cheema, N.; Azam, S.; Kashif, A.; Mughal, F.A.; Imran, M.)
Abstract	GaN HEMT with silicon substrate is famous and considered as the next generation of RF power transistor technology. It has major advantages of high power, low cost and reliability etc., GaN HEMT requires special attention in bias circuit to avoid the instability of the device. Sequence circuit is required to supply voltages in order. In this paper, we have design and implemented the sequential circuits in bias network for pulsed and CW applications. MAX881R is used in power supply for pulsed while LTI1964ES5-BYP with R2D Recon 2405 is used for high current application in CW. For pulsed applications in ON sequence the gate is turned-on ~ 220 ms before the drain, while in OFF sequence the drain is turned-off ~ 1.7 s before the gate. While in CW applications in ON sequence the gate is turned-on ~ 130ms before the drain and in OFF sequence, the drain is turned-off ~ 633ms before the gate.
Starting Page	420
Ending Page	423
File Size	1652294
Page Count	4
File Format	PDF
ISBN	9781467344258
e-ISBN	9781467344265
DOI	10.1109/IBCAST.2013.6512193
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-15
Publisher Place	Pakistan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	bias network MOSFET Heating GaN sequential circuits Radar HEMTs Logic gates device stability Gallium nitride
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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