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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mazzola, M. Gafford, J. Parker, C. Tian, G. Molen, M. |
| Copyright Year | 2008 |
| Description | Author affiliation: Center for Adv. Vehicular Syst., Mississippi State Univ., Starkville, MS (Mazzola, M.; Gafford, J.; Parker, C.; Tian, G.; Molen, M.) |
| Abstract | Silicon-carbide junction field-effect transistors (JFETs) are maturing in performance, reliability, and manufacturability, especially with voltage ratings ranging from 600-1800 V. The vertical channel JFET (VJFET) with extremely low specific on-resistance (< 0.25 $Omega-mm^{2})$ is now available. In this paper, new results are reported on a two-switch module packaged in a commercially available plastic half-bridge power module. The switches can handle steady currents up to 500 A, with at least 1 kA available before drain-current saturation occurs. Switching results with a diode-clamped inductive load are reported to investigate voltage sharing between the two series devices when switched simultaneously. The normally on characteristics of these JFET switches are ideal for current sources like charging of inductive loads. |
| Starting Page | 21 |
| Ending Page | 24 |
| File Size | 612566 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424415342 |
| DOI | 10.1109/IPMC.2008.4743566 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-05-27 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature Costs Silicon carbide Switches Voltage Bandwidth Capacitance Leakage current Vehicle dynamics FETs |
| Content Type | Text |
| Resource Type | Article |
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