NDLI: Fabrication and study of bulk and thin film CuGa/sub 1-x/In/sub x/Se/sub 2/ and Cu(Ga/sub 1-x/In)/sub 3/Se/sub 5/ photovoltaic materials obtained by the close-spaced vapour transport technique (CSVT)

Content Provider	IEEE Xplore Digital Library
Author	El Hal Moussa, G. Ariswan Yanuar Khoury, A. Guastavino, F. Llinares, C.
Copyright Year	2001
Abstract	In this paper we present a preparation of new bulk and thin film photovoltaic materials, CuGa/sub 1-x/In/sub x/Se/sub 2/ and Cu(Ga/sub 1-x/In/sub x/)/sub 3/Se/sub 5/, for fabrication of solar cells. The bulk materials are synthesised by the Bridgman technique. The elements Cu, Ga, In, and Se are placed in suitable proportions in a sealed vacuum flask under a vacuum of 10/sup -6/ torr. This flask undergoes slow thermal treatment upto a temperature just above the synthesis melting temperature /spl cong/1100/spl deg/C and then is cooled to the ambient temperature. We have realised thin films by the close-spaced vapour transport (CSVT) technique in a closed tube, iodine acts as the transport agent. The bulk and thin film samples are characterised by X-ray diffraction and energy dispersive spectrometry. The CSVT technique is very simple and low cost and permits good quality crystalline samples to be obtained with the aim of realising solar cells used in the conversion of solar energy.
Starting Page	213
Ending Page	218
File Size	211820
Page Count	6
File Format	PDF
ISBN	0780371178
DOI	10.1109/CMPLES.2000.939902
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-16
Publisher Place	Lebanon
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Photovoltaic systems Spectroscopy Temperature Costs Photovoltaic cells X-ray diffraction Transistors Solar power generation Dispersion
Content Type	Text
Resource Type	Article

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