NDLI: Effects of adding an SiO/sub 2/ film to the rear metal/semiconductor interface on the performance of a conventional solar cell based on n/sup +/p silicon

Content Provider	IEEE Xplore Digital Library
Author	Zerga, A. Benosman, M. Dujardin, F. Hoffmann, A. Bebyoucef, B. Charles, J.-P.
Copyright Year	2001
Description	Author affiliation: Dept. of Phys., Tlemcen Univ., Algeria (Zerga, A.)
Abstract	The modification of the rear surface of solar cells permits the considerable improvement of performance of these devices and solar cells with high yield. We have developed a numerical 1 D simulation code allowing study of the influence of the addition of an SiO/sub 2/ film between the back surface field (BSF) and the rear metallic contact. The code allows equal analysis of the contributions of different regions in the solar cell. We have established the division of the main results obtained that show that the thickness of the SiO/sub 2/ film plays a fundamental role in the determination of the performance of the solar cell. Another important result is obtained, justifying the use of the BSF to reduce the loss of yield and the open circuit voltage. At the end of this study, a performance optimisation of solar cells and the function of the length of the BSF, level of BSF doping, speed of rear surface recombination and thickness of the SiO/sub 2/ film is made.
Starting Page	116
Ending Page	122
File Size	85136
Page Count	7
File Format	PDF
ISBN	0780371178
DOI	10.1109/CMPLES.2000.939876
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-16
Publisher Place	Lebanon
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Minimax techniques Passivation Electrons
Content Type	Text
Resource Type	Article

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