NDLI: Effects of multi doped zones on the current-voltage characteristics and EL spectra in organic light emitting diodes

Content Provider	IEEE Xplore Digital Library
Author	Fuh-Shyang Juang Yu-Sein Tsai Shin-Ju Lin
Copyright Year	2003
Description	Author affiliation: Dept. of Electro-Opt. Eng., Nat. Huwei Inst. of Technol., Yunlin, Taiwan (Fuh-Shyang Juang; Yu-Sein Tsai; Shin-Ju Lin)
Abstract	The narrow rubrene-doped zones were located in the emitting layer, AlQ3. The effects of doped-zone width, position and zone number on the electroluminescence (EL) intensity of organic light emitting diodes (OLEDs) were studied. The current-voltage characteristics were also studied according to the trap charge limited (TCL) transport models. When the doped zone width increased, the EL intensity decreased dramatically due to the large trapping defects introduced by rubrene molecules. When a single doped zone is placed adjacent to the TPD/AlQ3 interface, the EL spectra have higher intensity. As the doped zone location moved away from the TPD/AlQ3 interface to the cathode, the conduction current decreased, the turn-on voltage increased and the EL efficiency decreased due to insufficient amount of holes can diffuse to the doped zone to recombine with trapped electrons in doped regions. Double and triple doped zones structures were used to fabricate the devices. The double doped-zone structure has the highest EL intensity. The emission intensity was more than 4 times higher than that of a single doped diode.
Sponsorship	Hong Kong Baptist Univ. Chinese Univ. of Hong Kong City Univ. of Hong Kong Hong Kong Polytechnic Univ. Univ. of Hong Kong Hong Kong Univ. of Sci. & Technol. Inst. of Elec. and Electron. Eng., Inc. (IEEE LEOS Hong Kong Chapter) AIXTRON AG Kopin Corp. Oxford Instruments/Teltec Semiconductor Pacific Ltd. Hong Kong Sci. and Technol. Parks Corp. Soc. for Inf. Display (SID Hong Kong Chapter)
Starting Page	103
Ending Page	106
File Size	246979
Page Count	4
File Format	PDF
ISBN	0780378873
DOI	10.1109/COS.2003.1278175
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-09-14
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spontaneous emission Charge carriers Current-voltage characteristics Voltage Doping Organic light emitting diodes Charge carrier processes Electroluminescence Substrates Cathodes
Content Type	Text
Resource Type	Article

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