NDLI: UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors

Content Provider	IEEE Xplore Digital Library
Author	Su, Y.K. Sheu, J.K.
Copyright Year	2003
Description	Author affiliation: Inst. of Microelectron., Cheng Kung Univ., Tainan, Taiwan (Su, Y.K.)
Abstract	Recent achievements in GaN-based light-emitting diodes (LEDs), which is linked to the use of new designs, such as p/sup +/-AlGaN/GaN strained-layer superlattice (SLS) and n/sup +/-InGaN/GaN short-period superlattice (SPS) top contact layer is reported. GaN-based LEDs with low-operation voltages, which are as low as 3 V (at 20 mA ) even lower, can be achieved by the use of these heavy-doped layers. In addition, conventional transparent conductive oxide, such as indium tin oxide (ITO), can be served as a transparent top contact layer in GaN-based LEDs other than thin metal film such as Ni/Au. Luminescence intensity in visible GaN-based LEDs can be significantly improved by this new design due to the high-transparency top contact layer. In the recent achievements, white LEDs including a variety of designs, such as phosphor-containing and phosphor-less device structures, will also be reported. Specifically, the high-efficiency yellow-green (/spl lambda//spl sim/565 nm) LEDs based on InGaN/GaN MQW emitting layers, which the luminescence intensity is comparable with the conventional AlGaInP yellow-green (/spl lambda//spl sim/575 nm) LEDs is achieved. This high-efficiency InGaN/GaN yellow-green LED makes a single-chip complementary white LED possible.
Sponsorship	Hong Kong Baptist Univ. Chinese Univ. of Hong Kong City Univ. of Hong Kong Hong Kong Polytechnic Univ. Univ. of Hong Kong Hong Kong Univ. of Sci. & Technol. Inst. of Elec. and Electron. Eng., Inc. (IEEE LEOS Hong Kong Chapter) AIXTRON AG Kopin Corp. Oxford Instruments/Teltec Semiconductor Pacific Ltd. Hong Kong Sci. and Technol. Parks Corp. Soc. for Inf. Display (SID Hong Kong Chapter)
Starting Page	3
Ending Page	6
File Size	117502
Page Count	4
File Format	PDF
ISBN	0780378873
DOI	10.1109/COS.2003.1278151
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-09-14
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gold Semiconductor superlattices Indium tin oxide Laser sintering Luminescence Voltage Light emitting diodes Conductive films Gallium nitride Quantum well devices
Content Type	Text
Resource Type	Article

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