NDLI: A strain-sensor-integrated test bed for electro mechanical characterization of VLSI probe

Content Provider	IEEE Xplore Digital Library
Author	Setoguchi, R. Lebrasseur, E. Kubota, M. Mita, Y.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan (Setoguchi, R.; Lebrasseur, E.; Kubota, M.; Mita, Y.)
Abstract	A piezoresistive bridge circuit on a CMOS LSI chip was post-processed by Silicon Deep Reactive Ion Etching (DRIE) to integrate a strain sensor in a freestanding cantilever. The cantilever is used to characterize contact-force to contactresistance relationship of the CMOS-MEMS Probe device for VLSI Circuit testing application. The sensor can be deployed in two scenarios; one is to use it as force sensor of contact pad, and the use as an integrated force sensor of a CMOS-MEMS test probe. A static measurement of a cantilever-type device gave strain gauge characteristic. In addition, a Lorentz force driven MEMS actuator is also proposed to in-situ calibrate the strain sensor. The experimental gauge factors of this sensor were 21 in static device and 25 in dynamic device.
Starting Page	1
Ending Page	5
File Size	1507935
Page Count	5
File Format	PDF
ISBN	9781479986279
e-ISBN	9781479986255
DOI	10.1109/DTIP.2015.7161037
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-27
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromechanical devices Force measurement Force Force sensors Electrical resistance measurement Probes Strain
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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