NDLI: Brightness Improvement and limited Forward Voltage of the AlGaInP MQW LED with Wet-Oxidation by Taguchi Method

Content Provider	IEEE Xplore Digital Library
Author	Ray-Ming Lin Jen-Chih Li Tzer-En Nee
Copyright Year	2006
Description	Author affiliation: Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China. (Ray-Ming Lin)
Abstract	To increase the external quantum efficiency of LED while limiting its forward voltage (Vf), we prepared both (AlxGa1–x)0.5In0.5P LED and buried oxides through selective wet oxidation of the AlAs layers of AlAs/GaAs distributed Bragg reflectors (DBRs). The wet oxidation process forms a stable AlxO material that acts as an insulation layer that affects both the carrier and optical confinements. The stable AlxO material that formed confined the transport region of injection carriers effectively and strongly decreased the chance of the carrier being trapped within the surface layer. To determine the trade-off conditions for LED oxidation, we used the Taguchi method which is a robust technique that is often used to analyze the significant trends that occur under a set of oxidation condition. In this study we uses an L9orthogonal array to measure the effects that a series of factors have upon the maximum brightness performance of the LED in an effort to limit the values of Vf. Relative to the as-grown LED, the oxidized LED that was treated under the trade-off wet-oxidation conditions displayed a sharply enhance the brightness (62.4% increase) in conjunction with only a slightly increased value of Vf(only a 24.5% increase).
Starting Page	245
Ending Page	248
File Size	150557
Page Count	4
File Format	PDF
ISBN	0780393570
DOI	10.1109/NANOEL.2006.1609722
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-01-10
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Carrier confinement Insulation Brightness Gallium arsenide Voltage Light emitting diodes Oxidation Optical materials Distributed Bragg reflectors Quantum well devices
Content Type	Text
Resource Type	Article

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