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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Prevot, I. Marcadet, X. Renard, C. Massies, J. |
| Copyright Year | 2002 |
| Description | Author affiliation: Thales Res. & Technol., Orsay, France (Prevot, I.; Marcadet, X.; Renard, C.) |
| Abstract | It is now well established that In surface segregation prevents the formation of abrupt interfaces for In containing III-V heterostructures. Despite the drastic effects of In surface segregation on the actual potential profiles at quantum-well interfaces, only scarce results are available for the InAs/(Al,Ga)Sb material system. However, this material system has recently gained much technological interest, in particular because it is well suited for the achievement of room-temperature quantum-well laser diodes emitting in the 3-5 /spl mu/m mid-infrared spectral domain. The purpose of this communication is to show that In surface segregation can be evidenced in real-time during the growth of AlSb on InAs(Sb) by MBE using reflection high-energy electron diffraction (RHEED). The. interface width deduced from RHEED measurements (five monolayers (/spl plusmn/1 ML) for example at a standard growth temperature of 430/spl deg/C) agrees very well with the one observed by high-resolution transmission electron microscopy. Moreover, the influence of growth parameters on the In segregation length (/spl omega/) at the AlSb on InAs(Sb) interface and on the associated segregation ratio R = e/sup -1//spl omega// can easily be evaluated from RHEED measurements. The In segregation length (/spl omega/) is found to increase with the growth temperature (from /spl ap/5 to 15 ML in the 430-520/spl deg/C temperature range) as expected for a kinetically limited surface segregation phenomenon. The associated segregation ratio R varies from 0.8 to 0.9. These results indicate that the composition and therefore the band profile of InAs/AlSb heterostructures are strongly affected by indium surface segregation at AlSb on InAs interfaces. |
| Sponsorship | IEEE Lasers & Electro-Opt. Soc |
| Starting Page | 169 |
| Ending Page | 170 |
| File Size | 153589 |
| Page Count | 2 |
| File Format | |
| ISBN | 0780375815 |
| DOI | 10.1109/MBE.2002.1037813 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-09-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature distribution Diffraction Transmission electron microscopy Measurement standards Quantum well lasers Length measurement Optical materials Optical reflection III-V semiconductor materials Diodes |
| Content Type | Text |
| Resource Type | Article |
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