NDLI: Interplays between plastic relaxation, surface morphology and composition modulation in InAlAs graded buffer layers under various growth conditions

Content Provider	IEEE Xplore Digital Library
Author	Chauveau, J.-M. Cordier, Y. Ferre, D. Androussi, Y. Di Persio, J.
Copyright Year	2002
Description	Author affiliation: LSPES, Lille I Univ., Villeneuve d'Ascq, France (Chauveau, J.-M.)
Abstract	The InAlAs/InGaAs heterostructure is highly interesting for microwave devices like HEMTs or HBTs due to the high electron mobility in the InGaAs layer when the In content is increased from 30% to 50%. To avoid the use of InP subtrates which are fragile and expensive, metamorphic structures on GaAs have been demonstrated. Since the optimal electrical properties are obtained with fully relaxed active layers without threading dislocations, different buffer layers have been proposed to compensate the large mismatch between the substrate and the heterostructure. In this work, InAlAs graded buffers have been investigated. The InAlAs alloy has been chosen to take advantages of the better isolating behavior compared to a InGaAs buffer and of the growth in one step of the InAlAs confining layers. Nevertheless this alloy exhibits a high tendency for decomposition, a poorer surface morphology and a more anisotropic relaxation compared to InGaAs buffer layer. As these characteristics are key parameters for the devices performance, the growth of InAlAs graded buffer layer requires an optimization concerning growth temperature and arsenic fluxes.
Sponsorship	IEEE Lasers & Electro-Opt. Soc
Starting Page	21
Ending Page	22
File Size	187596
Page Count	2
File Format	PDF
ISBN	0780375815
DOI	10.1109/MBE.2002.1037740
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-09-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Buffer layers Surface morphology Microwave devices HEMTs Electron mobility Indium gallium arsenide Indium compounds Plastics MODFETs Indium phosphide
Content Type	Text
Resource Type	Article

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