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Content Provider | IEEE Xplore Digital Library |
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Author | Merensky, L.M. Shafir, I. Sharabani, Y. Eger, D. Oron, M. Kardo-Sysoev, A.F. Shmilovitz, D. Sher, A. Kesar, A.S. |
Copyright Year | 2009 |
Description | Author affiliation: School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, Israel (Shmilovitz, D.) || Power Semiconductor Devices Laboratory, Ioffe Physical Technical Institute, 194021 St. Petersburg, Russia (Kardo-Sysoev, A.F.) || Soreq Nuclear Research Center, Yavne 81800, Israel (Merensky, L.M.; Shafir, I.; Sharabani, Y.; Eger, D.; Oron, M.; Sher, A.; Kesar, A.S.) |
Abstract | DSRDs are fast HV opening switching devices. Traditionally, these deep junction devices are fabricated on silicon wafers by deep diffusion. We present DSRD results based on silicon epitaxial layers with as-grown junctions. Static measurements showed a rectifying behavior with leakage currents proportional to device dimension. Pulsed power measurements showed that the switching rate was dependant on the DSRD current density. |
Starting Page | 1 |
Ending Page | 4 |
File Size | 275439 |
Page Count | 4 |
File Format | |
ISBN | 9781424439850 |
DOI | 10.1109/COMCAS.2009.5385950 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-11-09 |
Publisher Place | Israel |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Pulse generation Shape Current measurement Surface resistance Voltage Semiconductor diodes Semiconductor epitaxial layers Electrical resistance measurement semiconductor epitaxial layers Circuit testing Power semiconductor switches Substrates |
Content Type | Text |
Resource Type | Article |
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