NDLI: The degradation of reading performance in SONOS Flash Memory with small threshold voltage window

Content Provider	IEEE Xplore Digital Library
Author	Shi, Kai Xu, Ming-Zhen Tan, Chang-Hua
Copyright Year	2007
Description	Author affiliation: Department of Microelectronics, Peking University, Beijing, 100871, China (Shi, Kai; Tan, Chang-Hua) \|\| Department of Microelectronics, Peking University, Beijing, 100871, China. Email: mxu@pku.edu.cn (Xu, Ming-Zhen)
Abstract	In this paper, the threshold current was presented as a referential current of the bit-line to characterize the degradation of reading performances in SONOS flash memory with small threshold voltage window. The threshold current did not need any additional measurements, its feasibility was validated by both experiments and calculations, and it was more sensitive to the degradation of reading performances than the threshold voltage. And the degradation of reading performances was related to the generated interface traps.
Starting Page	145
Ending Page	148
File Size	203402
Page Count	4
File Format	PDF
ISBN	1424410975
DOI	10.1109/EDST.2007.4289798
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-03
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	SONOS devices Space vector pulse width modulation SONOS threshold voltage Threshold current threshold current Stress Charge measurement Degradation reading current Current measurement Flash memory Threshold voltage Monitoring
Content Type	Text
Resource Type	Article

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Characterization of Polysilicon-Oxide-Nitride-Oxide-Silicon (SONOS) Nonvolatile Semiconductor Memory (NVSM) Devices

Experimental Extraction of the Charge Centroid and of the Charge Type in the P/E Operation of Sonos Memory Cells

Determination of Lateral Charge Distributions of Split-gate SONOS Memories Using Experimental Devices with Nanometer-size Nitride Piece

Sub-threshold swing degradation due to localized charge storage in SONOS memories

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A 144 Mb 8-level NAND flash memory with optimized pulse width programming

Detailed observation of small leak current in flash memories with thin tunnel oxides

Enhanced Hot Carrier Effects In Scaled Flash Memory Devices

Charge Storage in MNOS Transistors at Electric Fields Near Gate Insulator Breakdown

The degradation of reading performance in SONOS Flash Memory with small threshold voltage window

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