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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Gang Chen Shichang Zhong Yuchao Li Song Bai |
| Copyright Year | 2013 |
| Description | Author affiliation: Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing, China (Gang Chen; Song Bai) || Nanjing Electron. Devices Inst., Nanjing, China (Shichang Zhong; Yuchao Li) |
| Abstract | As one of the third generation semiconductor materials, SiC has many advantages, such as high-power, high gate-drain breakdown voltage, heat stability and anti-radiation ability. So it is of high value for study and application prospect. This paper bases on 20mm SiC MESFET which is made by NEDI, through internally match circuit and power combiner technology, designs a power module. The power module output power has 150W with the gain is 9dB at S-band 2.8GHz under a pulse condition of 100us pulse width and 10% duty cycle. |
| Sponsorship | IEEE Beijing Sect. |
| Starting Page | 664 |
| Ending Page | 667 |
| File Size | 221559 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467360777 |
| e-ISBN | 9781467360791 |
| DOI | 10.1109/MAPE.2013.6689928 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Internally Match Circuit SiC MESFET Silicon carbide Power combiners Power Combiner Materials Logic gates MESFETs Integrated circuit modeling Power generation |
| Content Type | Text |
| Resource Type | Article |
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