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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhang Zhengfan Li Zhaoji Tan Kaizhou Zhang Jiabin |
| Copyright Year | 2007 |
| Description | Author affiliation: Univ. of Electron. Sci.& Technol.of China, Chengdu (Zhang Zhengfan; Li Zhaoji) |
| Abstract | In this paper, an analytical model of subthreshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion's equation and depletion approximation, and the relation of the subthreshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with subthreshold swing is proposed. |
| Sponsorship | IEEE Beijing Sect. |
| Starting Page | 1446 |
| Ending Page | 1449 |
| File Size | 2272449 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424410446 |
| DOI | 10.1109/MAPE.2007.4393552 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-08-16 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Integrated circuit technology Microwave antennas double-gate accumulation-mode subthreshold swing SOI MOSFET Electromagnetic compatibility analytical model Equations Microwave technology MOSFET circuits Isolation technology Antennas and propagation Silicon Microwave propagation |
| Content Type | Text |
| Resource Type | Article |
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