NDLI: A free-space method for measurement of complex permittivity of silicon wafers at microwave frequencies

Content Provider	IEEE Xplore Digital Library
Author	Baba, N.H. Awang, Z. Ghodgaonkar, D.K.
Copyright Year	2003
Description	Author affiliation: Fac. of Electr. Eng., Univ. Teknologi MARA, Selangor, Malaysia (Baba, N.H.; Awang, Z.; Ghodgaonkar, D.K.)
Abstract	A non-destructive, non-contact technique has been developed to characterize p-type and n-type silicon semiconductor wafers at microwave frequencies. The measurement system consists of a pair of spot-focusing horn lens antennas, mode transitions, coaxial cables and a vector network analyser (VNA). In this paper, the free-space reflection and transmission coefficients, S/sub 11/ and S/sub 21/, for a normally incident plane wave, are measured for a silicon wafer sandwiched between two teflon plates which are quarter-wavelength at midband. The actual reflection and transmission coefficient, S/sub 11/ and S/sub 21/, of the silicon wafers are calculated from the measured S/sub 11/ and S/sub 21/ of the teflon plate-silicon wafer-teflon plate assembly in which the complex permittivity and thickness of the teflon plates are known. From the complex permittivity, the resistivity and conductivity can be obtained. Results are reported in the frequency range of 11-12.5 GHz. The values of the dielectric constant obtained were close to published values for silicon wafers.
Starting Page	119
Ending Page	123
File Size	258720
Page Count	5
File Format	PDF
ISBN	0780381297
DOI	10.1109/APACE.2003.1234483
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-12
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Antenna measurements Permittivity measurement Horn antennas Conductivity Microwave frequencies Silicon Reflection Frequency measurement Microwave measurements Lenses
Content Type	Text
Resource Type	Article

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