NDLI: Evolution of radiation-induced soft errors in FinFET SRAMs under process variations beyond 22nm

Content Provider	IEEE Xplore Digital Library
Author	Royer, P. Garcia-Redondo, F. Lopez-Vallejo, M.
Copyright Year	2015
Description	Author affiliation: Dipt. de Ing. Electron., Univ. Politec. de Madrid, Madrid, Spain (Royer, P.; Garcia-Redondo, F.; Lopez-Vallejo, M.)
Abstract	New CMOS technologies such as SOI or FinFET are expected to enhance SRAM radiation-induced soft error rates thanks to a reduction on the charge collected as the devices get smaller. In this work we analyze how the radiation hardening capabilities of SRAMs are affected when process variations are considered by simulating cells using a predictive FinFET technology. The results show that even if the average critical charge to which SRAM cells are vulnerable is enhanced by process variations, its widened spread leads to an increase of the soft error rate by more than 40% as the technology node is scaled down to 7nm.
Starting Page	112
Ending Page	117
File Size	313719
Page Count	6
File Format	PDF
ISBN	9781467378499
DOI	10.1109/NANOARCH.2015.7180596
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-07-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Error analysis Radiation hardening (electronics) Critical Charge Soft Error Rate FinFET Radiation Process Variations SRAM Radiation Hardening SRAM cells FinFETs Threshold voltage Mathematical model Single Event Upset Mismatch
Content Type	Text
Resource Type	Article

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