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Content Provider | IEEE Xplore Digital Library |
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Author | Carrubba, V. Maroldt, S. Quay, R. Ambacher, O. |
Copyright Year | 2013 |
Description | Author affiliation: High Freq. Devices &Circuits, Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany (Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O.) |
Abstract | For the first time a two-tone intermodulation distortion behavior for the class-BJ power amplifier mode is studied. The right phase combination of fundamental and second harmonic terminations lead to new output solutions where the power-efficiency is maintained optimum. However, no IMD behavior has so far been investigated for such terminations on a power transistor through load-pull investigation. In this paper, the class-BJ IMD analysis is investigated theoretically and experimentally through measurement activity on a 1.2 mm AlGaN/GaN power transistor under a two-tone excitation. The measurement results show that the standard class-B and reactive class-BJ solutions deliver same power-efficiency as well as same IM3 performance when driving the device into compression. However, when driving the device at 6 dB input power back-off, despite power and efficiency are similar with varying the terminations, the standard class-B state reveals better IM3 values of -40.5 dBc compared with the class-BJ solution of -31.8 dBc. |
Starting Page | 420 |
Ending Page | 423 |
File Size | 302505 |
Page Count | 4 |
File Format | |
ISBN | 9782874870323 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2013-10-06 |
Publisher Place | Germany |
Access Restriction | Subscribed |
Rights Holder | European Microwave Association |
Subject Keyword | Performance evaluation Power measurement linearity Power amplifiers broadband amplifiers Harmonic analysis Power transistors power amplifiers intermodulation distortion Power generation Standards Aluminum gallium nitride |
Content Type | Text |
Resource Type | Article |
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