NDLI: A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers

Content Provider	IEEE Xplore Digital Library
Author	Tessmann, A. Hurm, V. Leuther, A. Massler, H. Weber, R. Kuri, M. Riessle, M. Stulz, H.P. Zink, M. Schlechtweg, M. Ambacher, O. Narhi, T.
Copyright Year	2013
Description	Author affiliation: Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany (Tessmann, A.; Hurm, V.; Leuther, A.; Massler, H.; Weber, R.; Kuri, M.; Riessle, M.; Stulz, H.P.; Zink, M.; Schlechtweg, M.; Ambacher, O.) \|\| Eur. Space Res. & Technol., Center (ESA/ESTEC), Noordwijk, Netherlands (Narhi, T.)
Abstract	A compact H-band (220-325 GHz) low-noise amplifier circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm metamorphic high electron mobility transistors (mHEMTs). The realized four-stage cascode LNA achieved a small-signal gain of 31 dB at 243 GHz and more than 28 dB in the frequency range from 218 to 280 GHz. Coplanar topology in combination with cascode transistors resulted in a very compact die size of only 0.5 × 1.5 $mm^{2}.$ For low-loss packaging of the circuit, a set of waveguide-to-microstrip transitions has been realized on 50 μm thick GaAs substrates demonstrating an insertion loss of less than 0.5 dB at 243 GHz. The realized LNA module achieved a small-signal gain of 30.6 dB and a room temperature (T = 293 K) noise figure of 5.6 dB at the frequency of operation.
Starting Page	220
Ending Page	223
File Size	297992
Page Count	4
File Format	PDF
ISBN	9782874870323
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-10-06
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	European Microwave Association
Subject Keyword	Waveguide transitions Low-noise amplifiers Gallium arsenide metamorphic high electron mobility transistor (mHEMT) grounded coplanar waveguide (GCPW) low-noise amplifier (LNA) mHEMTs millimeter-wave monolithic integrated circuit (MMIC) waveguide-to-microstrip transition MMICs Scattering parameters Gain H-band
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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