NDLI: Nonlinear thermal resistance characterization for compact electrothermal GaN HEMT modelling

Content Provider	IEEE Xplore Digital Library
Author	Santarelli, A. Di Giacomo, V. Cignani, R. D'Angelo, S. Niessen, D. Filicori, F.
Copyright Year	2010
Description	Author affiliation: Department of Electronics (DEIS), University of Bologna Viale Risorgimento 2, 40136 Bologna, Italy (Santarelli, A.; Di Giacomo, V.; Cignani, R.; D'Angelo, S.; Niessen, D.; Filicori, F.)
Abstract	A new method is proposed for the empirical characterization of the nonlinear thermal resistance in GaN HEMTs. Low-Frequency dispersion due to self-heating is used as the sensing parameter of the channel temperature changes deriving from dissipated power variations. Since GaN HEMTs are also affected by LF dispersive charge-trapping phenomena, the thermal resistance description is embedded into a full electrothermal model, in order to extract the parameters by best-fitting the measured data. The method involves only multi-bias small-signal S-parameter and de I/V measurements at different base plate temperatures. It is non-invasive, does neither require special-purpose device geometries/structures nor measurements in the conduction region of the gate junction. Preliminary validation of the method is based on comparisons with measured electrothermal data, with data from the literature on similar devices and on results provided by a large-signal RF device model embedding the thermal resistance description.
Starting Page	82
Ending Page	85
File Size	307927
Page Count	4
File Format	PDF
ISBN	9781424472314
e-ISBN	9782874870170
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-09-27
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	EUROPEAN MICROWAVE ASSOC
Subject Keyword	Temperature measurement Temperature sensors Thermal resistance Logic gates HEMTs Gallium nitride
Content Type	Text
Resource Type	Article

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