NDLI: Detailed Analysis of IMD of HBT PA Based on VBIC Model

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Trends in Microwave/Millimeter-Wave Front-End Technology

Solutions for input impedance matching of nanodevices: Application to Y-Branch Junction HF to DC rectifier

Noise and Dynamic Cryogenic performance of Metamorphic Transistors from 20 to 42 GHz

Electromagnetic-Thermal Analysis for Inductances and Eddy Current Losses of On-chip Spiral Inductors on Lossy Silicon Substrate

The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers

Ar Implantation, a Passivation Technique for High-Resistivity Silicon within the MCM-D Technology

InP-Based InAlAs/InGaAs Double-Gate Transistors Beyond Conventional HEMT's Limitations

Indium Antimonide based Quantum Well FETs for Ultra-high Frequency, Low Power Dissipation Circuits

Millimeter-Wave Front-End Components in Metamorphic HEMT Technology

Antenna-coupled microbolometers for passive THz direct detection imaging arrays

High Efficiency HBV Multipliers

Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements

Operation of RF Power MOSFETs under Proton Radiation

Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs

Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping

Enhanced Design and Performance of Power FETs based on Electromagnetic Modelling

Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology

Control of Short-Channel Effects in GaN/AlGaN HFETs

Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaN-GaN HEMT on Si with Gate-annealing and SiNX Passivation

A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz

Design and Analysis of a 34 dBm Ka-Band GaN High Power Amplifier MMIC

A Method to Design Distributed Harmonic Matching Networks

Generic robust LVCMOS-compatible control logic for GaAs HEMT switches

InP DHBT based MMICs for [DC-20 GHz] Signal Sampling

CAD Techniques for 183GHz Fixed Tuned Sub-Harmonic Mixer Using Foundry Diodes

Behavioral Modeling of Microwave Amplifiers Including Large-signal and Noise Interaction

Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits

77GHz Low Noise Sub Block MMICs with 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs

Configuration Dependence of SiGe HBT Linearity Characteristics

Bias and Temperature Dependant Third Order Nonlinearity of GaAs DHBTs and its use in Extracting Thermal Resistance

Low-Frequency Noise Measurements of Bipolar Devices Under High DC Current Density: Whether Transimpedance or Voltage Amplifiers

4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology

An Integrated Low Noise Amplifier and Image-rejection Mixer in a Surface Mount Package for Low Cost 10-22 GHz Applications

Ultra Low Noise Amplifier in SiGe:C Technology for 802.11a, b and g WLAN Applications

A Low Noise and Low Power, SiGe-BiCMOS LNA for IEEE 802.11a Applications

Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application

220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications

A GaAs HBT Low Power 24 GHz Downconverter with On-Chip Local-Oscillator

Design of Subharmonically Pumped Schottky Mixers for Submillimetre-wave Applications

High Performance PIN Diode in 0.18-μm SiGe BiCMOS Process for Broadband Monolithic Control Circuits

First InP/GaAsSb/InP DHBT Ka-band MMIC Oscillator

Capabilities of a 10 GHz MEMS based VCO

4-GHz Fully Monolithic SiGe HBT QVCO Using Superharmonic Coupling Topology

A Sub-1 V 1.6 GHz CMOS VCO with 29% Tuning Range

A 1.3V Low Phase Noise 2-GHz CMOS Quadrature LC VCO

A C-Band Oscillator MMIC with High Output Power, Low Harmonics, and Low Phase Noise using Passive Buffer

A Miniature YIG Tuned Oscillator/Frequency Divider Achieves Octave Tuning Bandwidth with Ultra Low Phase Noise in S, C, X and Ku Bands

Fast Settling 9GHz PLL Using 528MHz Reference PLL Clock for MB-OFDM UWB System

Incorporating the Single-Loop Delta-Sigma Modulator in Fractional-N Frequency Synthesizer for Phase-Noise Improvement

54 dB Image Rejection Fully Integrated Receiver for Multi-standard 5-GHz WLANs

High Intercept Point, Broadband, Cost-Effective, and Power-Efficient Passive Reflection FET DBM

An Integrated SiGe-BiCMOS Low Noise Transmitter Chip with a Frequency Divider Chain for 77 GHz Applications

A Fully Differential 60 GHz Receiver Front-End with Integrated PLL in SiGe:C BiCMOS

S-Band Sige Phase and Amplitude Control MMIC

A Low Cost Packaging Solution for Microwave Applications

Linear, Noise and Nonlinear HF Models for Advanced CMOS Technology

Compact RF Modeling of Multiple-Gate MOSFETs

CMOS Large Signal and RF Noise Model for CAD

Advanced Process Modules for (sub-) 45nm Analog/RF CMOS - Technology Description and Modeling Challenges

On-wafer wideband characterization of advanced MOS technologies

A Compact 500-mW Ku-band Power Amplifier MMIC in $3×3-mm^{2}$ Quad Flat (QFN) Packages

A Very Low Cost Ku-Band 2W Power Amplifier MMIC using a Plastic-Molded QFN Package

Multi Function and High Power Amplifier Chipset for X-Band Phased Array Frontends

Advanced High Power Amplifier Chain for X-Band T/R-Modules based on GaN MMICs

A Compact 8W S/C-Band MMIC Power Amplifier Designed for CW Telemetry Applications

Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization

A Frequency Domain Extraction Procedure of Low-Pass Equivalent Behavioural Models of Microwave PAs

A distributed approach for millimetre-wave electron device modelling

Systematic Evaluation of Non-Linear Microwave Device and Amplifier Models

RF-Power Amplifier Modeling and Predistortion Based on a Modular Approach

A Novel 5-30GHz Voltage Controlled Variable Attenuator with High Linearity in a Low Cost SMD Compact Package

A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology

An Ultra Compact C-Band 5-Bit MMIC Phase Shifter Based on All-Pass Network

An 8×8 Switch Matrix MMIC Integrating Eight InP-HEMT SP8T Switches for 10-Gbit/s Systems

A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD

New drain current model for MESFET/HEMT devices based on pulsed measurements

A Large-Signal Model of GaN HEMTs for Linear High Power Amplifier Design

An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities

DC/RF and Statistic Modeling of Four Terminal InGap/GaAs Bifet for wireless application

Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs

Performance Assessment of Nanoscale Multiple Gate MOSFETs (MuGFETs) for RF Applications

RF and Noise Performance of Multiple-Gate SOI MOSFETs

Analytical Solution in Complicated Volumes for Detailed Compact Thermal Model Construction

Dispersion of Linearity in Broadband FET Circuits

Frequency Generation for Mobile RFID Reader

A W-band MMIC One-Chip Set for Automotive Radar Sensor by using a 0.15μm mHEMT Process

A Ka-band MMIC Oscillator Using a Miniaturized CPW 1-D PBG Structure

A Zero-IF Sub-Harmonic Mixer with High LO-RF Isolation using 0.18 μm CMOS Technology

Microwave Power FET DC Model Extraction through Isothermal Non-Pulsed Measurements

Low-Temperature DC and RF Measurement and Modelling of InGaAs-InAlAs Resonant Tunneling Diodes down to 15 K

A Fully Integrated 5-6 GHz CMOS Variable-Gain LNA Using Helix-stacked Inductors

A New Harmonic Noise Frequency Filtering VCO and Mixer Co-design

Mixed-Mode Modeling and Parameter Extraction of Advanced InGaAs HBTs in RFIC Systems

Studies of InGaAs layers growth by metalorganic chemical vapor deposition for InP-HEMTs; Effects of trimethylindium and triethylindium

Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications

Charge Effects and Transient Simulation of p-HEMT Meander Gate Switches

Wideband and High Gain Cascode Amplifier using Metamorphic HEMT for Millimeter-wave Applications

High Performance 94 GHz Resistive Mixer Using GaAs Metamorphic HEMT Technology

A Single-Chip 5GHz WLAN Transmitter in 0.35μm Si/SiGe BiCMOS Technology

Compact Electro-thermal Modelling and Simulation of InP HBT Based on the Local Reference Concept

A Non-Quasi-Static, Relaxation-Time Small-Signal HEMT Model Compatible with Large-Signal Modeling

A Novel Power Plane Topology for Suppressing Parallel-Plate-Resonance Modes in High Speed Printed Circuit Boards

Low-voltage, Low-power and High-gain Mixer Based on Unbalanced Mixer Cell

Three Port Stability Analysis of Broadband Millimetre Wave MMIC Amplifier

Implant Isolation Characteristics for SoC Application

Beam Forming Network GaAs modules for Radioastronomy Focal Plane Arrays

Frequency-Domain Physics-Based Analysis of semiconductor devices by a Spectral-Balance approach

Improved Modified Materka Model for Simulation of Pinch-Off Variation in PHEMT Devices

A 4.5-5.8 GHz Differential LC VCO using 0.35 μm SiGe BiCMOS Technology

Broadband Active and Passive Balun Circuits: Functional Blocks for Modern Millimeter-Wave Radio Architectures

40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process

GaAs Power pHEMT Characterization for Extracting Nonlinear Parameters of Drain Current by Harmonic Measurement

A Multi Channel Down-converter Module Exploiting Recent Advances in Multi layer RF Packaging Techniques

Analysis of Microwave Resonances in a Wirebond Transition between Conductor-Backed Coplanar Waveguides (CBCPWs)

Frequency domain-based approach for nonlinear quasi-static FET model extraction from large-signal waveform measurements

Detailed Analysis of IMD of HBT PA Based on VBIC Model

Integrated Left-Handed Metamaterials on MMIC Technology

A 3-10GHz Broadband CMOS T/R Switch for UWB Applications

Foturan Cap and BCB Sealing-Ring for RF MEMS Packaging Applications

New de-embedding technique based on Cold-FET measurement

Four-port Deembedding Technique for FET Devices Mounted in Hybrid Test Fixture

LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs

Influence of Interconnect Parasitics on the Lateral Scaling of SiGe Power HBTs

Ultra-Wideband Shielded Vertical Via Transitions from DC up to the V-Band

30-Watt Power Amplifier for 3.5GHz WiMAX Base station Application

44-GHz High Power and Driver Microstrip Amplifier MMICs using 6-inch 0.15-μm PHEMTs

GaN HEMT Performance - Measurements and Simulations of a 3.6 mm Device from Cree

Advances in GaN-based discrete power devices for L- and X-band applications

Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

RF-MEMS technology platform for agile mobile and satellite communications

Broadband RF-MEMS Based SPDT

In-Plane Electrostatically-Actuated RF MEMS Switch Suspended on a Low-Resistivity Substrate

Simplified RF-MEMS Switches Using Implanted Conductors and Thermal Oxide

Contactless Dielectric Charging Mechanisms in RF-MEMS Capacitive Switches

Compact K-band Watt-level GaAs PHEMT Power Amplifier MMIC with integrated ESD protection

Constant Linearity Variable Gain Traveling Wave Amplifier MMIC for 1 to 26.5 GHz Applications

On-chip active gate bias circuit for MMIC amplifier applications with 100% threshold voltage variation compensation

A Millimeter-Wave Highly Linear VCO MMIC with Compact Tuning Voltage Converter

A High Performance 20-42 GHz MMIC Frequency Multiplier with Low Input Drive Power and High Output Power

A Low-Loss Microstrip Surface-Mount K-Band Package

PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate

Advanced 3D Packaging using Novel Liquid Crystalline Polymer Based Substrates

Thermal Characterisation of LTCC Frontend Modules with Integrated Power Amplifiers for Wireless LAN Application

A Rigorous Comparison of Package and PCB Effects on Micromixer- and Gilbert Mixer-Based Upconverter MMICs

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005

Detailed Analysis of IMD of HBT PA Based on VBIC Model

Content Provider	IEEE Xplore Digital Library
Author	Aikio, J.P. Vuolevi, J. Rahkonen, T.
Copyright Year	2006
Description	Author affiliation: Dept. of Electr. & Inf. Eng. & Infotech Oulu, Oulu Univ. (Aikio, J.P.; Vuolevi, J.; Rahkonen, T.)
Abstract	In this paper a recently proposed detailed distortion analysis technique is extended to apply in a rather complex VBIC model that contains multidimensional current and charge models. The technique is implemented on top of normal harmonic balance simulation, and it is based on fitting polynomial models for all nonlinear I-V and Q-V sources of the device, and using these to calculate the various contributions of IM3 distortion. The technique is used to analyze a 2 GHz InGa pHBT power amplifier that shows strong bandwidth dependent signal-induced bias shift
Starting Page	445
Ending Page	448
File Size	5099198
Page Count	4
File Format	PDF
ISBN	2960055187
DOI	10.1109/EMICC.2006.282678
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-10
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	EUROPEAN MICROWAVE ASSOC
Subject Keyword	Circuit simulation polynomial device model Distortion analysis Harmonic analysis Volterra analysis RF power amplifier Voltage control harmonic-balance Radio frequency Bandwidth Polynomials Heterojunction bipolar transistors Harmonic distortion Impedance Integrated circuit modeling
Content Type	Text
Resource Type	Article

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