NDLI: Linear, Noise and Nonlinear HF Models for Advanced CMOS Technology

Content Provider	IEEE Xplore Digital Library
Author	Danneville, F. Pailloncy, G. Siligaris, A. Gloria, D. Dambrine, G.
Copyright Year	2006
Description	Author affiliation: IEMN CNRS UMR, Villeneuve d'ascq (Danneville, F.)
Abstract	Deep CMOS technology requires more and more accurate and robust RF CMOS models (PSP, BSIM, EKV...) for circuit design, predictable down to millimetrique wave range. Because of their scalability, these models are the more convenient ones, their major drawback being the huge number of parameters to experimentally extract, which is costly and time consuming. Hence, whenever CMOS technology is under development, it looks interesting to investigate another approach. For this purpose, we propose in this work to show the usefulness of several in-house RF oriented models, fast to extract, to investigate the AC and noise properties of a 65 nm bulk CMOS technology. An extension is also proposed through the presentation of a large signal model, for which an application was carried out considering a 130 nm CMOS SOI technology
Starting Page	209
Ending Page	212
File Size	3978601
Page Count	4
File Format	PDF
ISBN	2960055187
DOI	10.1109/EMICC.2006.282789
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-10
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	EUROPEAN MICROWAVE ASSOC
Subject Keyword	Temperature HF Linear and Nonlinear Modeling Microelectronics Semiconductor device modeling Radio frequency Integrated circuit noise Hafnium 65 nm CMOS Technology Tin CMOS technology Circuit synthesis HF Noise Integrated circuit modeling
Content Type	Text
Resource Type	Article

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