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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Schroder, S. Dogan, O. Schneidewind, J. Bertotti, G. Keil, S. Gargouri, H. Arens, M. Brose, E. Bruns, J. Wolansky, D. Tillack, B. Vassanelli, S. Szyszka, B. Thewes, R. |
| Copyright Year | 2015 |
| Description | Author affiliation: Fac. of Electr. Eng. & Comput. Sci., Tech. Univ. Berlin, Berlin, Germany (Schroder, S.; Dogan, O.; Bertotti, G.; Keil, S.; Brose, E.; Bruns, J.; Szyszka, B.; Thewes, R.) || Technol./Process Res., IHP GmbH, Frankfurt/Oder, Germany (Wolansky, D.; Tillack, B.) || SENTECH Instrum. GmbH, Berlin, Germany (Schneidewind, J.; Gargouri, H.; Arens, M.) || Dept. of Anatomy & Human Physiol., Univ. of Padova, Padua, Italy (Vassanelli, S.) |
| Abstract | Titanium dioxide, known as a high-k biocompatible dielectric transducer material, is processed by means of ALD and applied to a 3D structure with dimensions typical for multi-site multi-channel in-vivo neural interfaces. High uniformity, high areal capacitance, and in particular low leakage current densities are achieved within a sufficiently wide operation voltage window. The results demonstrate the suitability of this process to provide dielectric interfaces for 3D biomedical applications. |
| Starting Page | 21 |
| Ending Page | 24 |
| File Size | 1568232 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479989812 |
| DOI | 10.1109/IWASI.2015.7184978 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-06-18 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electrodes atomic layer deposition (ALD) Current measurement Tin Capacitance Dielectric measurement Silicon Dielectrics in-vivo neural interfaces biochip TiO2 |
| Content Type | Text |
| Resource Type | Article |
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