NDLI: Contracting current paths in vanadium dioxide thin films

Content Provider	IEEE Xplore Digital Library
Author	Bein, M.C. Mizsei, J.
Copyright Year	2011
Description	Author affiliation: Budapest University of Technology and Economics, Department of Electron Devices, Magyar tudósok körútja 2., H-1117 Budapest, Hungary (Bein, M.C.; Mizsei, J.)
Abstract	Vanadium dioxide (VO2) has been extensively investigated due to its thermal-induced metal-insulator transition (MIT) at about 67 °C; which can be lowered by doping. During the transition from semiconductor to metallic phase electrical conductivity can increase by up to 3–4 orders of magnitude, while optical reflectance can drop by almost 50 %. Possible applications include thermally controlled electrical and optical switches. As the thin film is conductive optical changes can be induced electrically by Joule-heating. In this paper we present electro-optical measurements carried out on 100 nm thick VO2 thin films deposited on sapphire substrates. Phase transitions were electrically induced in contacted films and observed using an optical microscope. Strong spatial inhomogeneity has been detected: a few micron wide dark path connected the two contacts. The visible channel is a metallic area within the semiconducting film as the domain undergoes a MIT because of the Joule-heat of the flowing current. The optically observable fine structure found suggests that VO2 thin films could be used to visualize isotherms with a resolution of a few microns, similar to that of liquid crystals. Possible benefits include the simple and reliable use of the once deposited solid phase precision films and a higher resolution compared to liquid crystal thermography.
Starting Page	1
Ending Page	4
File Size	735825
Page Count	4
File Format	PDF
ISBN	9781457707780
e-ISBN	9782355000164
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-27
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	CMP
Subject Keyword	isotherm visualization Cooling Optical switches Conductivity Optical variables measurement thin film current visualization Transient analysis Substrates Optical pulses metal-insulator transition
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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