NDLI: Optical memory based on GeSbTe-O alloys

Content Provider	IEEE Xplore Digital Library
Author	Morales-Sanchez, E. Rivera- Rodriguez, C. Prokhorov, E. Kovalenko, Y. Gonzalez Hernandez, J.
Copyright Year	2005
Description	Author affiliation: UAEH, Hidalgo, Mexico (Morales-Sanchez, E.)
Abstract	The purpose of this study was to develop new active material for phase-change optical memory (Compact Disks) which would make it possible to record information with 3 or 4 levels of reflectivity and not only 2, as is the case now. With this goal in mind, the optical properties (reflectance) of Ge/sub 1/Sb/sub 2/Te/sub 4/ films doped with oxygen were investigated. X-ray diffraction shows that the crystalline phase for films with 2-8% oxygen corresponds to a Ge/sub 1/Sb/sub 2/Te/sub 4/ composition. However, the crystalline phase for films with more than 10% oxygen corresponds to Sb/sub 2/Te/sub 3/. This phase segregation in films containing more than 10% oxygen gives, as a result, an increase in nucleation times and in laser-induced crystallization times, making multilevel recording possible, that is to say, optical memory with ternary or quaternary code instead of just binary code.
Starting Page	416
Ending Page	418
File Size	93731
Page Count	3
File Format	PDF
ISBN	0780392302
DOI	10.1109/ICEEE.2005.1529658
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-09
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	crystallization process Optical diffraction reflectance Crystallization X-ray diffraction Phase change memory Tellurium optical memory Reflectivity Optical recording CD recording Optical materials Optical films
Content Type	Text
Resource Type	Article

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