NDLI: Photolumineseence of In/sub x/Ga/sub x/Sb/sub 1-y/ epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb

Content Provider	IEEE Xplore Digital Library
Author	Diaz-Reyes, J. Cardona-Bedoya, J.A. Mendoza-Alvarez, J. Manrique-Moreno, S. Galvan-Arellano, M. Hmera-Gomez, M.L. Ramirez-Cruz, M.A.
Copyright Year	2004
Description	Author affiliation: CICATA-IPN, Unidad Puebla, Acatlan 63, Col. La Paz, Puebla, Pue. C.P. 72160, Mexico (Diaz-Reyes, J.) \|\| Depto. de Ing, Electrica SEES, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico DF 07000, Mexico (Manrique-Moreno, S.; Galvan-Arellano, M.) \|\| Depto. de Fisica, CINVESTAV-IPN, Apdo. PostaI 14-740, Mexico DF 07000, Mexico (Cardona-Bedoya, J.A.; Mendoza-Alvarez, J.) \|\| CICATA-IPN, Unidad Legaria, Av. Legaria 694, Col. Irrigacion, Mexico, D. F. 11500, Mexico (Hmera-Gomez, M.L.; Ramirez-Cruz, M.A.)
Abstract	The influence of tellurium doping on the optical properties of $In_{x}Ga_{1-x}As_{y}Sb_{1-y}$ epitaxial layers has been studied by photoluminescence (PL) spectroscopy. Layers were grown by liquid phase epitaxy on (100) GaSb substrates highly resistive under lattice-matching conditions. PL measurements were carried out by exciting the sample with the 488-nm line of an &-ion laser and varying the exciting power in the range between 40 and 200 mW. PL spectra were also measured at different temperatures in the range between 15 and 300 IL For the low-doped sample the PL spectrum showed a narrow exciton-related peak centered at around 648.6 meV with a full width at half maximum (FWHM) of about 7 meV which is an evidence of the good crystalline quality of the epilayers and another dominant peak at 614 meV associated to band-to-acceptor. For higher Te-doping, the PL spectra showed the presence of band-to-band and donor-to-acceptor transitions which overlap as Te concentration increases. The peak of the PL band shifts to higher energies as Te doping increases due to a band-filling effect as the Fermi level enters into the conduction band. From the energy peak of the PL spectra and using a model that includes the band-filling and band-shrinkage effects due to the carriers, we have estimated the effective carrier concentration due to the doping with Te in the epilayers, in the range $10_{16}$ to $10_{17}$ $cm_{-3}.$
Starting Page	247
Ending Page	252
File Size	944145
Page Count	6
File Format	PDF
ISBN	0780385314
DOI	10.1109/ICEEE.2004.1433886
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-08
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature distribution Scanning electron microscopy Doping and Photoluminescence Epitaxial layers Power lasers Boats Photoluminescence Luminescence Doping $Ga_{1-x}In_{x}As_{y}Sb_{1-y}$ Liquid Phase Epitaxy Epitaxial growth Tellurium
Content Type	Text
Resource Type	Article

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