NDLI: Design of nMOS driving circuits integrated with field emitter arrays

Content Provider	IEEE Xplore Digital Library
Author	Jong Duk Lee Jung Hyun Nam Il Hwan Kim Chang Woo Oh
Copyright Year	1998
Description	Author affiliation: Sch. of Electr. Eng., Seoul Nat. Univ., South Korea (Jong Duk Lee)
Abstract	Describes the active device controlled FEA, like MCFEA (MOSFET controlled FEA). When integrating the driving circuit with FEA, the processing sequence is compatible with MOSFET and the active device in the pixel for driving FEA can be attained simply. Ideally, it requires only as high as the threshold voltage to drive an MCFEA, which gives extra benefits including stable and uniform emission current. It also reduces driving load from the capacitance of FEA gate to that of MOSFET gate. The one-transistor and one-FEA configuration is the simplest and most suitable for one-chip FED. The MOSFET acts as a line selection switch by driving the gates of MOSFET and the common sources are controlled in current or voltage driving mode.
Starting Page	63
Ending Page	64
File Size	163766
Page Count	2
File Format	PDF
ISBN	0780350960
DOI	10.1109/IVMC.1998.728640
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-07-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOS devices Field emitter arrays Voltage MOSFET circuits Shift registers Circuit simulation Displays Switches Driver circuits Manufacturing processes
Content Type	Text
Resource Type	Article

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Design of nMOS driving circuits integrated with field emitter arrays