NDLI: A Phosphine Sub Atmospheric Delivery System (SADS) Applied to Low Pressure Chemical Vapor Deposition (LPCVD) of In-Situ Doped Polysilicon

Content Provider	IEEE Xplore Digital Library
Author	Bowser, J. Young, W. Lei Chen Luciani, V.
Copyright Year	2012
Abstract	Phosphine gas is widely used as the phosphorus source for the deposition of in-situ doped n-type polysilicon. Typically, high pressure bottled phosphine gas is used for this purpose with excellent results. However, the safe use of a pressurized gaseous phosphine source requires a remote gas cabinet in a suitable location, double walled stainless steel tubing, and multiple toxic gas sensing points. The cost of this infrastructure can be prohibitive for many research laboratories. As a safe means around this cost issue, we have successfully implemented a commercially available phosphine SADS as the dopant source for in situ doped polysilicon. SADS has been proven as a safer source and can be installed locally, inside the source cabinet attached to the LPCVD furnace stack meeting all semiconductor industry safety requirements [1]. Based on the enhanced safety and reduced infrastructure requirements, we implemented SADS in the CNST NanoFab LPCVD system.
Starting Page	1
Ending Page	1
File Size	110814
Page Count	1
File Format	PDF
ISBN	9781457717512
ISSN	07496877
e-ISBN	9781457717529
e-ISBN	9781457717505
DOI	10.1109/UGIM.2012.6247086
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-07-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Furnaces Safety Electronics industry Fluid flow Films Chemical vapor deposition Nanoscale devices
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Conditions for obtaining in-situ phosphorus doped lpcvd polysilicon layers with high conductivity onto glass substrates.

In-situ boron-doped low-stress LPCVD polysilicon for micromechanical disk resonator

Thermal Expansion of Low-pressure Chemical Vapor Deposition Polysilicon Films

Polysilicon films*(^).

Microphysical investigation of low temperature annealed LPCVD polysilicon thin films

Low Pressure Chemical Vapor Deposition of Polysilicon

Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes

Deposition of low stress polysilicon thin films using low-pressure chemical vapour deposition

Doped Silicon Oxide Deposition by Atmospheric Pressure and Low Temperature Chemical Vapor Deposition Using Tetraethoxysilane and Ozone

A Phosphine Sub Atmospheric Delivery System (SADS) Applied to Low Pressure Chemical Vapor Deposition (LPCVD) of In-Situ Doped Polysilicon

Similar Documents

Conditions for obtaining in-situ phosphorus doped lpcvd polysilicon layers with high conductivity onto glass substrates.

In-situ boron-doped low-stress LPCVD polysilicon for micromechanical disk resonator

Thermal Expansion of Low-pressure Chemical Vapor Deposition Polysilicon Films

Polysilicon films*(^).

Microphysical investigation of low temperature annealed LPCVD polysilicon thin films

Low Pressure Chemical Vapor Deposition of Polysilicon

Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes

Deposition of low stress polysilicon thin films using low-pressure chemical vapour deposition

Doped Silicon Oxide Deposition by Atmospheric Pressure and Low Temperature Chemical Vapor Deposition Using Tetraethoxysilane and Ozone

A Phosphine Sub Atmospheric Delivery System (SADS) Applied to Low Pressure Chemical Vapor Deposition (LPCVD) of In-Situ Doped Polysilicon