NDLI: Role of argon ion bombardment in sputtered AlN films for SAW devices

Content Provider	IEEE Xplore Digital Library
Author	Iborra, E. Clement, M. Sangrador, J. Sanz-Hervas, A. Navarro, A.J. Aguilar, M.
Copyright Year	2002
Description	Author affiliation: Univ. Politecnica de Madrid, Spain (Iborra, E.; Clement, M.; Sangrador, J.; Sanz-Hervas, A.; Navarro, A.J.; Aguilar, M.)
Abstract	In this work we present a study of the effect of particle bombardment on the orientation and residual stress of AlN polycrystalline thin films obtained by planar RF sputtering. AlN films were deposited on silicon [100] substrates by sputtering an aluminum target in Ar and N/sub 2/ mixtures. The main deposition parameters were changed as follows: pressure (4-11 mTorr), N/sub 2/ content (20-80%), RF voltage (700-1900 V), and negative substrate bias (10-30 V). We observed that by controlling the substrate bias we were able to modify the preferred orientation of the films for a wide range of variation of the other process parameters. If a sufficiently high substrate bias was applied, (00.2)-oriented films were obtained for the full range of pressure, target voltage and N/sub 2/ content. This feature provided us with a large flexibility to optimize other essential parameters such as residual stress, independently of the intended preferred orientation. Films with stress values from -3 to +1 GPa have been obtained for different deposition conditions. Our results suggest that the energy of the argon ions colliding with the substrate during deposition is a key parameter to control the preferred orientation of the films, whereas the ion incidence angle is the main factor determining the amount of residual stress.
Sponsorship	Ultransonics Ferroelectr., & Frequency Control Soc
Starting Page	411
Ending Page	414
File Size	106078
Page Count	4
File Format	PDF
ISBN	0780375823
ISSN	10510117
DOI	10.1109/ULTSYM.2002.1193431
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-10-08
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Argon Surface acoustic wave devices Residual stresses Sputtering Radio frequency Semiconductor films Silicon Aluminum Pressure control Voltage control
Content Type	Text
Resource Type	Article

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